GT60N321 PDF

Product Index > Discrete Semiconductor Products > Transistors – IGBTs – Single > Toshiba Semiconductor and Storage GT60N(Q). Obsolete item. Photo Not. GT60N 1. TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT. GT60N High Power Switching Applications. The 4th. GT60N 1. TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT. GT60N High Power Switching Applications. Fourth Generation IGBT.

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Toshiba GT60N(Q) IGBT, 60 A V, 3-Pin TO-3PLH | GT60N(Q) | RS Components

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GT60N321 IGBT. Datasheet pdf. Equivalent

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gt60n321 The product does not contain any of the restricted substances in concentrations and applications banned gt60n321 the Directive, and for components, the product is capable of being worked on at the higher temperatures required by g60n321 soldering The restricted substances and maximum allowed concentrations in the homogenous material are, by weight: RS Components Statement of conformity. Gt60n321 cost cannot be calculated. Packaging should be the gt60n321 as what is found in a retail gt60n321, unless the item is handmade or was packaged by the manufacturer in non-retail packaging, such gt60n321 an unprinted box or plastic bag.

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